? 2011 ixys corporation, all rights reserved IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 v ces = 600v i c110 = 36a v ce(sat) 1.80v symbol test conditions maximum ratings v ces t j = 25c to 150c 600 v v cgr t j = 25c to 150c, r ge = 1m 600 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c 100 a i c110 t c = 110c 36 a i cm t c = 25c, 1ms 230 a ssoa v ge = 15v, t vj = 125c, r g = 10 i cm = 72 a (rbsoa) clamped inductive load v ce v ces p c t c = 25c 290 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c f c mounting force (to-263) 10..65 / 2.2..14.6 n/lb. m d mounting torque (to-220 & to-247) 1.13 / 10 nm/lb.in. weight to-263 2.5 g to-220 3.0 g to-247 6.0 g ds100319a(04/11) g = gate d = collector s = emitter tab = collector to-247 (ixgh) g e c c (tab) to-263 aa (ixga) g e c (tab) g c e to-220ab (ixgp) c (tab) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 600 v v ge(th) i c = 250 a, v ce = v ge 4.0 6.5 v i ces v ce = v ces , v ge = 0v 25 a t j = 125 c 1 ma i ges v ce = 0v, v ge = 20v 100 na v ce(sat) i c = 36a, v ge = 15v, note 1 1.43 1.80 v t j = 125 c 1.40 v high-gain igbts low-vsat pt trench igbt features z optimized for low conduction and switching losses z international standard packages z square rbsoa advantages z easy to mount z space savings applications z power inverters z ups z motor drives z smps z pfc circuits z battery chargers z lamp ballasts preliminary technical information
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = i c110 , v ce = 10v, note 1 20 30 s c ie s 1860 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 105 pf c res 60 pf q g 110 nc q ge i c = i c110 , v ge = 15v, v ce = 0.5 ? v ces 13 nc q gc 43 nc t d(on) 37 ns t ri 68 ns e on 0.93 mj t d(off) 330 ns t fi 80 ns e of f 1.00 1.80 mj t d(on) 31 ns t ri 45 ns e on 0.94 mj t d(off) 280 ns t fi 220 ns e off 1.90 mj r thjc 0.43 c/w r thcs to-247 0.21 c/w to-220 0.50 c/w inductive load, t j = 125c i c = 36a, v ge = 15v v ce = 400v, r g = 10 note 2 inductive load, t j = 25c i c = 36a, v ge = 15v v ce = 400v, r g = 10 note 2 notes: 1. pulse test, t 300 s, duty cycle, d 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . preliminary technical information the product presented herein is under development. the technical specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. ixys reserves the right to change limits, test conditions, and dimensions without notice. dim. millimeter inches min. max. min. max. a 4.7 5.3 .185 .209 a 1 2.2 2.54 .087 .102 a 2 2.2 2.6 .059 .098 b 1.0 1.4 .040 .055 b 1 1.65 2.13 .065 .084 b 2 2.87 3.12 .113 .123 c .4 .8 .016 .031 d 20.80 21.46 .819 .845 e 15.75 16.26 .610 .640 e 5.20 5.72 0.205 0.225 l 19.81 20.32 .780 .800 l1 4.50 .177 ? p 3.55 3.65 .140 .144 q 5.89 6.40 0.232 0.252 r 4.32 5.49 .170 .216 s 6.15 bsc 242 bsc e ? p to-247 outline 1 2 3 terminals: 1 - gate 2 - collector 3 - emitter to-263 outline pins: 1 - gate 2 - drain to-220 outline 1 = gate 2 = collector 3 = emitter 4 = collector 1 = gate 2 = collector 3 = emitter
? 2011 ixys corporation, all rights reserved IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 fig. 1. output characteristics @ t j = 25oc 0 8 16 24 32 40 48 56 64 72 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 7v 6v 8v 9v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 5 10 15 20 25 v ce - volts i c - amperes v ge = 15v 8v 9v 11v 13v 12v 7v 10v 14v 6v fig. 3. output characteristics @ t j = 125oc 0 8 16 24 32 40 48 56 64 72 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 v ce - volts i c - amperes v ge = 15v 13v 11v 10v 8v 9v 6v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 36a i c = 18a i c = 72a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 6 7 8 9 101112131415 v ge - volts v ce - volts i c = 72 a t j = 25oc 36 a 18 a fig. 6. input admittance 0 20 40 60 80 100 120 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 v ge - volts i c - amperes t j = - 40oc 25oc 125oc
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 fig. 7. transconductance 0 5 10 15 20 25 30 35 40 45 50 0 20 40 60 80 100 120 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 10. reverse-bias safe operating area 0 20 40 60 80 100 120 100 150 200 250 300 350 400 450 500 550 600 v ce - volts i c - amperes t j = 125oc r g = 10 ? dv / dt < 10v / ns fig. 11. maximum transient thermal impedance 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 pulse width - second z (th)jc - oc / w fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 20 40 60 80 100 120 q g - nanocoulombs v ge - volts v ce = 300v i c = 36a i g = 10ma fig. 9. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarads f = 1 mhz c ies c oes c res
? 2011 ixys corporation, all rights reserved IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 fig. 12. inductive switching energy loss vs. gate resistance 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 10 15 20 25 30 35 r g - ohms e off - millijoules 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 3.6 4 e on - millijoules e off e on - - - - t j = 125oc , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 15. inductive turn-off switching times vs. gate resistance 140 160 180 200 220 240 260 280 10 15 20 25 30 35 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 700 800 t d ( off ) - nanoseconds t f i t d(off) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 72a i c = 36a fig. 13. inductive switching energy loss vs. collector current 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes e off - millijoules 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 125oc, 25oc fig. 14. inductive switching energy loss vs. junction temperature 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade e off - millijoules 0.5 1.0 1.5 2.0 2.5 3.0 e on - millijoules e off e on - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 36a i c = 72a fig. 16. inductive turn-off switching times vs. collector current 0 50 100 150 200 250 300 350 400 15 20 25 30 35 40 45 50 55 60 65 70 75 i c - amperes t f i - nanoseconds 180 210 240 270 300 330 360 390 420 t d ( off ) - nanoseconds t f i t d(off) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc t j = 25oc fig. 17. inductive turn-off switching times vs. junction temperature 40 80 120 160 200 240 280 320 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f i - nanoseconds 190 220 250 280 310 340 370 400 t d ( off ) - nanoseconds t f i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 36a i c = 72a
ixys reserves the right to change limits, test conditions, and dimensions. IXGA50N60B4 ixgp50n60b4 ixgh50n60b4 ixys ref: g_50n60b4(l5)03-23-11 fig. 19. inductive turn-on switching times vs. collector current 0 20 40 60 80 100 120 140 15 25 35 45 55 65 75 i c - amperes t r i - nanoseconds 20 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v t j = 125oc t j = 25oc fig. 20. inductive turn-on switching times vs. junction temperature 20 40 60 80 100 120 140 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r i - nanoseconds 25 30 35 40 45 50 55 t d ( on ) - nanoseconds t r i t d(on) - - - - r g = 10 ? , v ge = 15v v ce = 400v i c = 72a i c = 36a fig. 18. inductive turn-on switching times vs. gate resistance 20 40 60 80 100 120 140 160 10 15 20 25 30 35 r g - ohms t r i - nanoseconds 24 30 36 42 48 54 60 66 t d ( on ) - nanoseconds t r i t d(on) - - - - t j = 125oc, v ge = 15v v ce = 400v i c = 36a i c = 72a
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